1994. 5. 20 1/2 semiconductor technical data KTC1006 epitaxial planar npn transistor revision no : 0 cb transceiver tx driver application. features recommended for driver stage application of am 4w transmitter. high power gain. wide area of safe operation. maximum ratings (ta=25 1 ) dim millimeters a b d e g h k l 1. emitter 2. collector 3. base p to-92l 7.20 max 5.20 max 2.50 max 0.60 max 1.27 1.70 max 0.55 max 14.00 0.50 0.35 min 0.75 0.10 4 f j m o q 25 1.25 1.50 0.10 max depth:0.2 123 b a c q k ff m m n n o h l j d c n g p hh e d h r s 12.50 0.50 r 1.00 s 1.15 max + _ + _ + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo 80 v collector-emitter voltage v cer 80 v emitter-base voltage v ebo 5 v collector current i c 800 ma emitter current i e -800 ma colletor power dissipation p c 1 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =60v, i e =0 - - 0.1 a collector cut-off current i cer v ce =80v, r be =220 u - - 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1 a dc current gain h fe v ce =2v, i c =150ma 100 - - collector-emitter saturation voltage v ce(sat) i c =500ma, i b =20ma - - 0.7 v base-emitter voltage v be v ce =2v, i c =500ma - 0.9 - v transition frequency f t v ce =10v, i c =100ma - 150 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 12 - pf
1994. 5. 20 2/2 KTC1006 revision no : 0 cb collector-base voltage v (v) c - v output capacitance c (pf) cb 1 3 5 10 30 i - v c ce ce collector-emitter voltage v (v) 01 c 0 collector current i (ma) f - i t c c collector current i (a) 0.01 t transition frequency f (mhz) 20 dc current gain h fe 1k 0.01 collector current i (a) c c fe h - i collector-emitter saturation ce(sat) 0.01 0.01 1 collector current i (a) c c ce(sat) v - i 23 4567 200 400 600 800 1k 2k common emitter ta=25 c i =1ma b 2ma 3ma 4ma 5ma 6ma 0.03 0.1 0.3 1 2 20 100 300 500 common emitter v =2v ta=25 c ce voltage v (v) 0.03 0.1 0.3 2 0.03 0.05 0.1 0.3 0.5 1 common emitter i /i =25 c b ta=25 c 0.03 0.1 0.3 1 10 30 50 100 300 500 1k common emitter v =10v ta=25 c ce ob ob 1 3 10 30 100 200 50 100 300 common emitter f=1mhz ta=25 c collector power dissipation p (w) 0 c 0.5 50 25 0 ambient temperature ta ( c) pc - ta 75 100 125 150 175 0.8 1 3 no heat sink
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